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FLM1011-8F
X, Ku-Band Internally Matched FET FEATURES
* * * * * * * High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: add = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed
DESCRIPTION
The FLM1011-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 11.7GHz, f = 10MHz 2-Tone Test Pout = 28.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 10.7 ~ 11.7 GHz IDS 0.65 IDSS(Typ.) ZS = ZL = 50 Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS = 170mA IGS = -170A Min. -0.5 -5.0 38.5 6.0 -44 Limit Typ. Max. 3400 3400 -1.5 39.0 7.0 2200 29 -46 3.0 5200 -3.0 2600 0.6 3.5 80 Unit mA mS V V dBm dB mA % dB dBc C/W C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3 August 2004
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FLM1011-8F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V f1 = 11.7 GHz f2 = 11.71 GHz 2-tone test
Pout
Total Power Dissipation (W)
40
Output Power (S.C.L.) (dBc)
33 31 29 27 25 23
30
-20 -30
IM3
20
-40 -50
10
0
50
100
150
200
16
18
20
22
24
Case Temperature (C)
Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V P1dB
OUTPUT POWER vs. INPUT POWER
40
39
Pin=33dBm
VDS=10V f = 11.2 GHz
Pout
Output Power (dBm)
39
31dBm
Output Power (dBm)
37 35 33 31
38 37 36 35
27dBm 29dBm
30
add
29
15
10.7
10.95
11.2
11.45
11.7
23
25
27
29
31
33
Frequency (GHz)
Input Power (dBm)
2
add (%)
IM3 (dBc)
FLM1011-8F
X, Ku-Band Internally Matched FET
S11 S22 +j100 +j25
10.7 11.7
+j50
+90
S21 S12
10.9 11.1
+j10
11.5 11.3 11.9
11.9
+j250
10.5 GHz
10.5 GHz 10.5 GHz 10.7 10.9 11.1
11.3
11.3
0
10
11.1
50
11.7
10.7 10.9
180
4
3
2
1
11.5 11.7
SCALE FOR |S21| SCALE FOR |S12|
11.5
0
10.9
11.5 10.7
11.3
11.1
11.7
-j10
10.5 GHz
-j250
11.9
0.1
11.9
-j25 -j50
-j100
0.2
-90
FREQUENCY (MHZ)
10500 10600 10700 10800 10900 11000 11100 11200 11300 11400 11500 11600 11700 11800 11900
S11 MAG
.638 .630 .617 .597 .570 .539 .498 .449 .397 .337 .276 .217 .167 .143 .168
ANG
13.3 5.4 -2.6 -10.6 -18.9 -27.5 -36.2 -45.8 -55.9 -67.2 -80.6 -97.8 -124.5 -162.8 157.8
S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG
2.349 2.376 2.410 2.446 2.476 2.513 2.544 2.563 2.565 2.561 2.548 2.528 2.519 2.509 2.502 110.3 100.3 89.8 78.9 68.3 57.0 45.3 33.5 21.5 9.2 -2.8 -14.9 -27.2 -39.7 -52.6 .066 .071 .074 .076 .081 .082 .083 .087 .088 .090 .090 .089 .093 .090 .093 93.2 83.2 73.3 63.9 53.1 43.1 32.6 22.7 12.3 0.3 -10.3 -21.7 -32.9 -44.9 -57.6
S22 MAG
.386 .358 .326 .299 .283 .282 .297 .324 .356 .386 .411 .425 .429 .419 .399
ANG
-83.3 -93.7 -106.9 -122.1 -140.5 -161.2 179.1 161.1 146.0 133.2 122.1 112.3 103.1 94.1 84.4
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FLM1011-8F
X, Ku-Band Internally Matched FET
Case Style "IB" Metal-Ceramic Hermetic Package
2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508)
12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827)
1. Gate 2. Source (Flange) 3. Drain
Unit: mm(inches)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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